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SI7454DP-T1-E3
Power MOSFET, N Channel, 100 V, 5 A, 0.034 ohm, PowerPAK SO, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7454DP-T1-E3
Order Code1470131
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id5A
Drain Source On State Resistance0.034ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation1.9W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The SI7454DP-T1-E3 is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC primary side switch, telecom/server and full/half-bridge DC-to-DC applications.
- New low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- PWM optimized
- Fast switching
- 100% Rg tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management, Communications & Networking, Automotive
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
1.9W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.034ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
8Pins
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000218
Product traceability