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SI7386DP-T1-E3
Power MOSFET, N Channel, 30 V, 12 A, 0.007 ohm, PowerPAK SO, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7386DP-T1-E3
Order Code2101459RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id12A
Drain Source On State Resistance0.007ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation1.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The SI7386DP-T1-E3 is a TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC conversion applications.
- Reduced total dynamic gate charge (Qg)
- Fast switching
- PWM optimized for high efficiency
- New low thermal resistance PowerPAK® package with small size and low 1.07mm profile
- 100% Rg tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
12A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
1.8W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.007ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000736