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SI7336ADP-T1-E3
Power MOSFET, N Channel, 30 V, 30 A, 0.003 ohm, PowerPAK SO, Surface Mount
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No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7336ADP-T1-E3
Order Code2335358
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id30A
Drain Source On State Resistance0.003ohm
Transistor Case StylePowerPAK SO
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation5.4W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The SI7336ADP-T1-E3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for low-side DC-to-DC conversion applications.
- Ultra-low ON-resistance
- Qg optimized
- 100% Rg tested
- 100% UIS tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
30A
Transistor Case Style
PowerPAK SO
Rds(on) Test Voltage
10V
Power Dissipation
5.4W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.003ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001