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SI7113DN-T1-GE3
Power MOSFET, P Channel, 100 V, 13.2 A, 0.134 ohm, PowerPAK 1212, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £1.830 |
| 10+ | £1.080 |
| 100+ | £0.796 |
| 500+ | £0.635 |
| 1000+ | £0.583 |
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Multiple: 1
£1.83 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7113DN-T1-GE3
Order Code2335351
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id13.2A
Drain Source On State Resistance0.134ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation52W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
- P-channel 100V (D-S) TrenchFET® power MOSFET
- Low thermal resistance PowerPAK® package with Low 1.07mm profile
- UIS and Rg tested
- Suitable for active clamp in intermediate DC/DC power supplies
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
13.2A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
4.5V
Power Dissipation
52W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.134ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Israel
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000069
Product traceability