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SI6463BDQ-T1-GE3
Power MOSFET, P Channel, 20 V, 6.2 A, 0.011 ohm, TSSOP, Surface Mount
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No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI6463BDQ-T1-GE3
Order Code2335339
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id6.2A
Drain Source On State Resistance0.011ohm
Transistor Case StyleTSSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max800mV
Power Dissipation1.05W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
6.2A
Transistor Case Style
TSSOP
Rds(on) Test Voltage
4.5V
Power Dissipation
1.05W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.011ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
800mV
No. of Pins
8Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001