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SI5513DC-T1-E3
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 4.2 A, 4.2 A, 0.065 ohm
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No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI5513DC-T1-E3
Order Code1470128
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel4.2A
Continuous Drain Current Id P Channel4.2A
Drain Source On State Resistance N Channel0.065ohm
Drain Source On State Resistance P Channel0.065ohm
Transistor Case Style1206
No. of Pins8Pins
Power Dissipation N Channel1.1W
Power Dissipation P Channel1.1W
Operating Temperature Max150°C
Product Range-
Qualification-
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Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
4.2A
Drain Source On State Resistance P Channel
0.065ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.1W
Product Range
-
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id N Channel
4.2A
Drain Source On State Resistance N Channel
0.065ohm
Transistor Case Style
1206
Power Dissipation N Channel
1.1W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.14
Product traceability