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SI5475DDC-T1-GE3
Power MOSFET, P Channel, 12 V, 6 A, 0.026 ohm, 1206, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI5475DDC-T1-GE3
Order Code1794819RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id6A
Drain Source On State Resistance0.026ohm
Transistor Case Style1206
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max400mV
Power Dissipation5.7W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The SI5475DDC-T1-GE3 is a 12VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch applications.
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
6A
Transistor Case Style
1206
Rds(on) Test Voltage
4.5V
Power Dissipation
5.7W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.026ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
400mV
No. of Pins
8Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000046
Product traceability