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SI4925BDY-T1-E3
Dual MOSFET, P Channel, 30 V, 7.1 A
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No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4925BDY-T1-E3
Order Code1684078
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel-
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel-
Continuous Drain Current Id P Channel7.1A
Drain Source On State Resistance N Channel-
Drain Source On State Resistance P Channel0.02ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel-
Power Dissipation P Channel1.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for SI4925BDY-T1-E3
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Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
7.1A
Drain Source On State Resistance P Channel
0.02ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.1W
Product Range
-
Drain Source Voltage Vds N Channel
-
Continuous Drain Current Id N Channel
-
Drain Source On State Resistance N Channel
-
Transistor Case Style
SOIC
Power Dissipation N Channel
-
Operating Temperature Max
150°C
Qualification
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0004