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SI4850EY-T1-E3
Power MOSFET, N Channel, 60 V, 8.5 A, 0.018 ohm, SOIC, Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 17 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 2500+ | £0.595 |
| 7500+ | £0.583 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
£1,487.50 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4850EY-T1-E3
Order Code4335716
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id8.5A
Drain Source On State Resistance0.018ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation3.3W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8.5A
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Power Dissipation
3.3W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.018ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00026
Product traceability