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SI4490DY-T1-GE3
Power MOSFET, N Channel, 200 V, 2.85 A, 0.065 ohm, SOIC, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 100+ | £1.190 |
| 500+ | £0.992 |
| 1000+ | £0.853 |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
£122.50 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4490DY-T1-GE3
Order Code1858959RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id2.85A
Drain Source On State Resistance0.065ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation3.1W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
- N-channel 200V (D-S) TrenchFET® power MOSFET
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.85A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
3.1W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.065ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005
Product traceability