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SI4466DY
Power MOSFET, N Channel, 20 V, 13.2 A, 9000 µohm, SOIC, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4466DY
Order Code9550577RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id13.2A
Drain Source On State Resistance9000µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for SI4466DY
1 Product Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
13.2A
Transistor Case Style
SOIC
Rds(on) Test Voltage
4.5V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
9000µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005