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SI4286DY-T1-GE3
Dual MOSFET, N Channel, 40 V, 40 V, 7 A, 7 A, 0.027 ohm
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ManufacturerVISHAY
Manufacturer Part NoSI4286DY-T1-GE3
Order Code2646383
Product RangeTrenchFET Series
Technical Datasheet
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4286DY-T1-GE3
Order Code2646383
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel7A
Continuous Drain Current Id P Channel7A
Drain Source On State Resistance N Channel0.027ohm
Drain Source On State Resistance P Channel0.027ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2.9W
Power Dissipation P Channel2.9W
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
Alternatives for SI4286DY-T1-GE3
1 Product Found
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id P Channel
7A
Drain Source On State Resistance P Channel
0.027ohm
No. of Pins
8Pins
Power Dissipation P Channel
2.9W
Product Range
TrenchFET Series
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id N Channel
7A
Drain Source On State Resistance N Channel
0.027ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2.9W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001