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Quantity | Price (ex VAT) |
---|---|
100+ | £0.455 |
500+ | £0.327 |
1000+ | £0.298 |
5000+ | £0.235 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 5
£49.00 (ex VAT)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4162DY-T1-GE3
Order Code1779240RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id19.3A
Drain Source On State Resistance0.0065ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead (07-Nov-2024)
Product Overview
The SI4162DY-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC conversion applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
19.3A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0065ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000134
Product traceability