Print Page
SI3442BDV-T1-E3
Power MOSFET, N Channel, 20 V, 3 A, 0.045 ohm, TSOP, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3442BDV-T1-E3
Order Code1497610RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id3A
Drain Source On State Resistance0.045ohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.8V
Power Dissipation860mW
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for SI3442BDV-T1-E3
1 Product Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3A
Transistor Case Style
TSOP
Rds(on) Test Voltage
4.5V
Power Dissipation
860mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.045ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.8V
No. of Pins
6Pins
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0002