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SI3440DV-T1-E3
Power MOSFET, N Channel, 150 V, 1.2 A, 0.375 ohm, TSOP, Surface Mount
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| Quantity | Price (ex VAT) |
|---|---|
| 5+ | £1.030 |
| 50+ | £0.732 |
| 100+ | £0.539 |
| 500+ | £0.471 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3440DV-T1-E3
Order Code2396094
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id1.2A
Drain Source On State Resistance0.375ohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation1.14W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The SI3440DV-T1-E3 is a 150VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for low power DC-to-DC converter applications.
- PWM optimized for fast switching in small footprint
- 100% Rg tested
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.2A
Transistor Case Style
TSOP
Rds(on) Test Voltage
10V
Power Dissipation
1.14W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.375ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000055
Product traceability