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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2338DS-T1-GE3
Order Code2646366
Product RangeTrenchFET
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id6A
Drain Source On State Resistance0.023ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Nov-2024)
Product Overview
- 30V, 6A N-channel TrenchFET® power MOSFET in 3 pin SOT-23 package
- Low on-resistance
- 100 % Rg tested
- Suitable for DC/DC converter and high speed switching applications
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
6A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.023ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
No. of Pins
3Pins
Product Range
TrenchFET
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for SI2338DS-T1-GE3
4 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00002