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SI2328DS-T1-E3
Power MOSFET, N Channel, 100 V, 1.5 A, 0.25 ohm, SOT-23, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2328DS-T1-E3
Order Code1470107
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id1.5A
Drain Source On State Resistance0.25ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation730mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (15-Jun-2015)
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Product Overview
The SI2328DS-T1-E3 is a 100V N-channel TrenchFET® Power MOSFET.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.5A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
730mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jun-2015)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.25ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001