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SI2314EDS-T1-E3
Power MOSFET, N Channel, 20 V, 4.9 A, 0.033 ohm, TO-236, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2314EDS-T1-E3
Order Code1470104
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4.9A
Drain Source On State Resistance0.033ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max950mV
Power Dissipation750mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The SI2314EDS-T1-E3 is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for LI-ion battery protection applications.
- 3000V ESD protected
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4.9A
Transistor Case Style
TO-236
Rds(on) Test Voltage
4.5V
Power Dissipation
750mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.033ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
950mV
No. of Pins
3Pins
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0001