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SI2308BDS-T1-E3
MOSFET, N CHANNEL, 60V, 2.3A, SOT-23-3
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| Quantity | Price (ex VAT) |
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| 25+ | £0.377 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2308BDS-T1-E3
Order Code2459410
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2.3A
Drain Source On State Resistance0.13ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation1.66W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (07-Nov-2024)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.3A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
1.66W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.13ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000043
Product traceability