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SI1972DH-T1-E3
Dual MOSFET, N Channel, 30 V, 1.3 A, 0.155 ohm
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1972DH-T1-E3
Order Code1794821RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel1.3A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.155ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel1.25W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Product Range
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
1.3A
Drain Source On State Resistance N Channel
0.155ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
1.25W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000005