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SI1021R-T1-GE3
Power MOSFET, P Channel, 60 V, 190 mA, 4 ohm, SOT-416, Surface Mount
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1021R-T1-GE3
Order Code2335269
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id190mA
Drain Source On State Resistance4ohm
Transistor Case StyleSOT-416
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max3V
Power Dissipation250mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
- P-channel 60V (D-S) TrenchFET® power MOSFET
- High-side switching
- Low on-resistance of 4ohm
- Low threshold of - 2V (typ)
- Fast switching speed of 20ns (typ)
- Low input capacitance of 20pF (typ)
- Miniature package
- 2KV ESD protected
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
190mA
Transistor Case Style
SOT-416
Rds(on) Test Voltage
4.5V
Power Dissipation
250mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
4ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0005
Product traceability