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No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1013R-T1-GE3
Order Code2335267
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id350mA
Drain Source On State Resistance0.8ohm
Transistor Case StyleSOT-416
Transistor MountingSurface Mount
Rds(on) Test Voltage1.8V
Gate Source Threshold Voltage Max450mV
Power Dissipation150mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for SI1013R-T1-GE3
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Product Overview
The SI1013R-T1-GE3 is a 1.8VGS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for relays, solenoids, lamps, hammers, displays and memories drivers.
- 2000V Gate-source ESD protected
- High-side switching
- Low ON-resistance
- Low threshold
- 14ns Fast switching speed
- Halogen-free
- Ease in driving switches
- Low offset voltage
- Low-voltage operation
- High-speed circuits
- Low battery voltage operation
Applications
Industrial, Power Management, Portable Devices
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
350mA
Transistor Case Style
SOT-416
Rds(on) Test Voltage
1.8V
Power Dissipation
150mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.8ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
450mV
No. of Pins
3Pins
Product Range
-
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00003
Product traceability