Print Page
IRL640PBF
Power MOSFET, N Channel, 200 V, 17 A, 0.18 ohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
861 In Stock
1,000 more incoming. You can reserve stock now
EXPRESS Delivery Next Business Day - arrives by 1PM*
Order before 6pm
FREE Standard Delivery
on orders £0.00 and over
Accurate delivery times will be calculated in Checkout
| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £1.370 |
| 10+ | £1.040 |
| 100+ | £1.010 |
| 500+ | £0.904 |
| 1000+ | £0.813 |
| 5000+ | £0.805 |
Price for:Each
Minimum: 1
Multiple: 1
£1.37 (ex VAT)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRL640PBF
Order Code8659923
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id17A
Drain Source On State Resistance0.18ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max2V
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The IRL640PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Logic-level gate drive
- Ease of paralleling
- RDS (ON) Specified at VGS = 4 and 5V
- Simple drive requirements
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
17A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
5V
Power Dissipation
125W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.18ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
SVHC
Lead (21-Jan-2025)
Technical Docs (2)
Alternatives for IRL640PBF
1 Product Found
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002
Product traceability