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No Longer Manufactured
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFB17N50LPBF
Order Code2547305
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id16A
Drain Source On State Resistance0.32ohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation220W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for IRFB17N50LPBF
3 Products Found
Product Overview
The IRFB17N50LPBF is a N-channel enhancement-mode Power MOSFET with low gate charge.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche voltage and current
- Simple drive requirements
- Low trr and soft diode recovery
Applications
Industrial, Power Management, Signal Processing
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
16A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
220W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.32ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
Technical Docs (3)
Associated Products
7 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002