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Product Information
ManufacturerVISHAY
Manufacturer Part NoIRF840ALPBF
Order Code1611637
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id8A
Drain Source On State Resistance0.85ohm
Transistor Case StyleTO-262
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max-
Power Dissipation3.1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (07-Nov-2024)
Product Overview
The IRF840ALPBF is a HEXFET® N-channel Power MOSFET offers low gate charge Qg results in simple drive requirement. It is suitable for high speed power switching.
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance, avalanche voltage and current
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8A
Transistor Case Style
TO-262
Rds(on) Test Voltage
10V
Power Dissipation
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (07-Nov-2024)
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.85ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002386
Product traceability