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2N6845
Power MOSFET, P Channel, 100 V, 4 A, 0.6 ohm, TO-39, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerTT ELECTRONICS / SEMELAB
Manufacturer Part No2N6845
Order Code1208693
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id4A
Drain Source On State Resistance0.6ohm
Transistor Case StyleTO-39
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation20W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The 2N6845 is a P-channel enhancement-mode Power MOSFET offers ±20V gate-source voltage and -4A continuous drain current.
- High voltage
- Hermetically sealed metal package
- Simple drive requirements
- Light weight
- -55 to 150°C Operating temperature range
Applications
Power Management, Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4A
Transistor Case Style
TO-39
Rds(on) Test Voltage
10V
Power Dissipation
20W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.6ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:No
RoHS Phthalates Compliant:No
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000907