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TTA1943(Q)
Bipolar (BJT) Single Transistor, Audio, PNP, 230 V, 15 A, 150 W, TO-3PL, Through Hole
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTTA1943(Q)
Order Code1901958
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max230V
Continuous Collector Current15A
Power Dissipation150W
Transistor Case StyleTO-3PL
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency30MHz
DC Current Gain hFE Min80hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The TTA1943 from Toshiba is a through hole PNP silicon epitaxial transistor in TO-3 package. This device is commonly used for power amplification.
- Collector to emitter voltage (Vce) is -230V
- Collector current (Ic) is -15A
- Power dissipation (Pd) is 150W
- Collector to emitter saturation voltage of -3V at -8A collector current
- DC current gain (hFE) of 80 at -1A collector current
- Operating junction temperature range from 150°C
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
15A
Transistor Case Style
TO-3PL
No. of Pins
3Pins
DC Current Gain hFE Min
80hFE
Product Range
-
Collector Emitter Voltage Max
230V
Power Dissipation
150W
Transistor Mounting
Through Hole
Transition Frequency
30MHz
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.015876
Product traceability