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TPC8120
Power MOSFET, P Channel, 30 V, 18 A, 0.0026 ohm, SOIC, Surface Mount
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTPC8120
Order Code1901967
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id18A
Drain Source On State Resistance0.0026ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max800mV
Power Dissipation1.9W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The TPC8120 is a -30V Silicon P-channel MOSFET with low drain-source ON resistance. Suitable for use in lithium ion battery and power management switch applications.
- High forward transfer admittance
- Low leakage current
- Enhancement mode
- Small footprint due to small and thin package
Applications
Power Management
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
18A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
1.9W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0026ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
800mV
No. of Pins
8Pins
Product Range
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Japan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.005262