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TSM2311CX
Power MOSFET, P Channel, 20 V, 4 A, 0.045 ohm, SOT-23, Surface Mount
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Product Information
ManufacturerTAIWAN SEMICONDUCTOR
Manufacturer Part NoTSM2311CX
Order Code1864586RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id4A
Drain Source On State Resistance0.045ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max600mV
Power Dissipation900mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The TSM2311CX is a P-channel MOSFET with advanced Trench process technology and ±8V gate source voltage.
- High Density Cell Design for Ultra Low On-resistance
Applications
Audio, Signal Processing
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Power Dissipation
900mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.045ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
600mV
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000008