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ES1B R2G
Fast / Ultrafast Diode, 100 V, 1 A, Single, 950 mV, 35 ns, 30 A
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Product Information
ManufacturerTAIWAN SEMICONDUCTOR
Manufacturer Part NoES1B R2G
Order Code2677276
Technical Datasheet
Repetitive Peak Reverse Voltage100V
Average Forward Current1A
Diode ConfigurationSingle
Forward Voltage Max950mV
Reverse Recovery Time35ns
Forward Surge Current30A
Operating Temperature Max150°C
Diode Case StyleDO-214AC (SMA)
No. of Pins2 Pin
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2020)
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Product Overview
Warnings
Market demand for this product has caused an extension in lead times, delivery dates may fluctuate
Technical Specifications
Repetitive Peak Reverse Voltage
100V
Diode Configuration
Single
Reverse Recovery Time
35ns
Operating Temperature Max
150°C
No. of Pins
2 Pin
Qualification
-
Average Forward Current
1A
Forward Voltage Max
950mV
Forward Surge Current
30A
Diode Case Style
DO-214AC (SMA)
Product Range
-
SVHC
No SVHC (25-Jun-2020)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2020)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000068