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No Longer Stocked
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW48NM60N
Order Code2098396
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id39A
Drain Source On State Resistance0.055ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.2V
Power Dissipation255W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The STW48NM60N is a MDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest ON-resistance. It is therefore suitable for the most demanding high efficiency converters.
- 100% Avalanche tested
- Low gate input resistance
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
39A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
255W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.055ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.2V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.013608