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STW18N60M2
Power MOSFET, N Channel, 600 V, 13 A, 0.255 ohm, TO-247, Through Hole
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW18N60M2
Order Code2784048
Product RangeMDmesh II Plus
Technical Datasheet
No Longer Stocked
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTW18N60M2
Order Code2784048
Product RangeMDmesh II Plus
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id13A
Drain Source On State Resistance0.255ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation110W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh II Plus
Qualification-
SVHCNo SVHC (17-Dec-2015)
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3 Products Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
13A
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Power Dissipation
110W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.255ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
MDmesh II Plus
SVHC
No SVHC (17-Dec-2015)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000002