STPSC10H065BY-TR
Silicon Carbide Schottky Diode, Single, 650 V, 10 A, 28.5 nC, TO-252 (DPAK)
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £3.010 |
| 10+ | £2.200 |
| 100+ | £1.640 |
| 500+ | £1.540 |
| 1000+ | £1.530 |
Product Information
Product Overview
The Schottky Silicon-Carbide Diodes from STMicroelectronics take advantage of SiC's impressive performance over standard Silicon. Offering double or triple the bandgap in comparison to silicon means that SIC devices can tolerate much higher voltages and electric fields. The low reverse recovery characteristics increase efficiency in all systems thanks to their low forward voltage and make ST's silicon-carbide diodes a key contributor to energy savings. These savings are found in SMPS applications as well as solar energy conversion, EV or HEV charging stations, and many more. The product ranges from 600V to 1200Vin through hole and SMD packages.
Technical Specifications
-
650V
28.5nC
3 Pin
Surface Mount
No SVHC (21-Jan-2025)
Single
10A
TO-252 (DPAK)
175°C
AEC-Q101
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate