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STN3P6F6
Power MOSFET, P Channel, 60 V, 3 A, 0.13 ohm, SOT-223, Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTN3P6F6
Order Code2629749
Product RangeDeepGATE STripFET VI
Technical Datasheet
36 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £0.770 |
| 10+ | £0.585 |
| 100+ | £0.430 |
| 500+ | £0.357 |
| 1000+ | £0.306 |
| 5000+ | £0.283 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTN3P6F6
Order Code2629749
Product RangeDeepGATE STripFET VI
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id3A
Drain Source On State Resistance0.13ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation2.6W
No. of Pins4Pins
Operating Temperature Max175°C
Product RangeDeepGATE STripFET VI
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
3A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
2.6W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.13ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
4Pins
Product Range
DeepGATE STripFET VI
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00011
Product traceability