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STI6N62K3
Power MOSFET, N Channel, 620 V, 5.5 A, 0.95 ohm, TO-262, Through Hole
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No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTI6N62K3
Order Code2098268
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds620V
Continuous Drain Current Id5.5A
Drain Source On State Resistance0.95ohm
Transistor Case StyleTO-262
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation90W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.5A
Transistor Case Style
TO-262
Rds(on) Test Voltage
10V
Power Dissipation
90W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
620V
Drain Source On State Resistance
0.95ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.15