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STH80N10F7-2
Power MOSFET, N Channel, 100 V, 80 A, 0.008 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTH80N10F7-2
Order Code3367048
Product RangeSTripFET VII DeepGATE
Technical Datasheet
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTH80N10F7-2
Order Code3367048
Product RangeSTripFET VII DeepGATE
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id80A
Drain Source On State Resistance0.008ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation110W
No. of Pins2Pins
Operating Temperature Max175°C
Product RangeSTripFET VII DeepGATE
Qualification-
SVHCNo SVHC (17-Dec-2015)
Product Overview
Applications
Medical
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
110W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.008ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.5V
No. of Pins
2Pins
Product Range
STripFET VII DeepGATE
SVHC
No SVHC (17-Dec-2015)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00138
Product traceability