Print Page
STH180N10F3-6
Power MOSFET, N Channel, 100 V, 180 A, 0.0039 ohm, H2PAK-6, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTH180N10F3-6
Order Code2098249
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id180A
Drain Source On State Resistance0.0039ohm
Transistor Case StyleH2PAK-6
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation315W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Alternatives for STH180N10F3-6
1 Product Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
180A
Transistor Case Style
H2PAK-6
Rds(on) Test Voltage
10V
Power Dissipation
315W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0039ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.03