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No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTF9N65M2
Order Code2460395
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id5A
Drain Source On State Resistance0.79ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation20W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The STF9N65M2 is a MDmesh M2 N-channel Power MOSFET offers Zener-protection and extremely low gate charge. This Power MOSFET is developed using the MDmesh™ M2 technology. Due to the strip layout associated to an improved vertical structure, the device exhibits both low ON-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high efficiency converters.
- Excellent output capacitance (COSS) profile
- 100% Avalanche tested
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5A
Transistor Case Style
TO-220FP
Rds(on) Test Voltage
10V
Power Dissipation
20W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.79ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002
Product traceability