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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD7NS20T4
Order Code2098187RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id7A
Drain Source On State Resistance0.4ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation45W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The STD7NS20T4 is a MESH OVERLAY™ N-channel Power MOSFET offers outstanding performance. The device layout coupled with the proprietary edge termination structure, makes it suitable in converters for lighting applications.
- 0.35Ω RDS (ON)
- Extremely high dV/dt capability
- 100% Avalanche tested
- Very low intrinsic capacitances
Applications
Power Management, Communications & Networking, Lighting, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
7A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
45W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.4ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000544