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STD6N65M2
Power MOSFET, N Channel, 650 V, 4 A, 1.2 ohm, TO-252 (DPAK), Surface Mount
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD6N65M2
Order Code2460385RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id4A
Drain Source On State Resistance1.2ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation60W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
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Product Overview
The STD6N65M2 is a MDmesh™ N-channel Power MOSFET offers Zener-protection and extremely low gate charge. This Power MOSFET developed using MDmesh™ M2 technology which has strip layout and improved vertical structure, the device exhibits low ON-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
- 100% Avalanche tested
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
60W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
650V
Drain Source On State Resistance
1.2ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00033