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STD2NK60Z-1
Power MOSFET, N Channel, 600 V, 1.4 A, 8 ohm, TO-251AA, Through Hole
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No Longer Manufactured
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD2NK60Z-1
Order Code9512683
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id1.4A
Drain Source On State Resistance8ohm
Transistor Case StyleTO-251AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.75V
Power Dissipation45W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for STD2NK60Z-1
1 Product Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.4A
Transistor Case Style
TO-251AA
Rds(on) Test Voltage
10V
Power Dissipation
45W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
8ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.75V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002