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STD11NM50N
Power MOSFET, N Channel, 500 V, 8.5 A, 0.4 ohm, TO-252 (DPAK), Surface Mount
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No Longer Stocked
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD11NM50N
Order Code2098154
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id8.5A
Drain Source On State Resistance0.4ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation70W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The STD11NM50N is a MDmesh™ II N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to strip layout yields lowest ON-resistance and gate charge. It is suitable for the most demanding high efficiency converters.
- 100% Avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
8.5A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
70W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.4ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.03