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STD11N60M2-EP
Power MOSFET, N Channel, 600 V, 7.5 A, 0.55 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD11N60M2-EP
Order Code3132719
Product RangeMDmesh M2 EP
Technical Datasheet
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD11N60M2-EP
Order Code3132719
Product RangeMDmesh M2 EP
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id7.5A
Drain Source On State Resistance0.55ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation85W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh M2 EP
Qualification-
SVHCNo SVHC (17-Dec-2015)
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Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
7.5A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
85W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.55ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
MDmesh M2 EP
SVHC
No SVHC (17-Dec-2015)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00035
Product traceability