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STD110N8F6
Power MOSFET, N Channel, 80 V, 80 A, 0.0056 ohm, TO-252 (DPAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD110N8F6
Order Code3132718
Product RangeSTripFET F6
Technical Datasheet
190 In Stock
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD110N8F6
Order Code3132718
Product RangeSTripFET F6
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id80A
Drain Source On State Resistance0.0056ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4.5V
Power Dissipation167W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeSTripFET F6
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
80A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
167W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.0056ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
STripFET F6
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00035
Product traceability