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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTD10PF06T4
Order Code1468000
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id10A
Drain Source On State Resistance0.18ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation40W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
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Product Overview
The STD10PF06T4 is a STripFET™ II P-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
- 0.18Ω RDS (ON)
- Exceptional dV/dt capability
- 100% Avalanche tested
- Low gate charge
- Application oriented characterization
- Surface-mount power package
Applications
Power Management, Motor Drive & Control, Industrial
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
10A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
40W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.18ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Morocco
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Morocco
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):1.33