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STB80PF55T4
Power MOSFET, P Channel, 55 V, 40 A, 0.016 ohm, TO-263 (D2PAK), Surface Mount
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB80PF55T4
Order Code1752015RL
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id40A
Drain Source On State Resistance0.016ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
40A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
55V
Drain Source On State Resistance
0.016ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:France
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:France
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0002