Print Page
STB50NF25
Power MOSFET, N Channel, 250 V, 22 A, 0.055 ohm, TO-263 (D2PAK), Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB50NF25
Order Code1752000RL
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id22A
Drain Source On State Resistance0.055ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation160W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The STB50NF25 is a STripFET™ II N-channel Power MOSFET designed to minimize On-resistance and gate charge. It is suitable as primary side switch allowing high efficiencies.
- 100% Avalanche tested
- Gate charge minimized
- Low intrinsic capacitances
- -55 to 150°C Operating junction temperature
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
22A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
160W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.055ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:France
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:France
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0002