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STB33N60DM2
Power MOSFET, Mdmesh DM2, N Channel, 600 V, 24 A, 0.11 ohm, TO-263 (D2PAK), Surface Mount
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Available to Order
Manufacturer Standard Lead Time: 19 week(s)
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| Quantity | Price (ex VAT) |
|---|---|
| 1000+ | £1.580 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1000
Multiple: 1000
£1,580.00 (ex VAT)
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB33N60DM2
Order Code2531104
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id24A
Drain Source On State Resistance0.11ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation190W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
24A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
190W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
600V
Drain Source On State Resistance
0.11ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
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Associated Products
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00138
Product traceability