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STB140NF75T4
Power MOSFET, N Channel, 75 V, 120 A, 0.0075 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB140NF75T4
Order Code1751977
Product RangeSTripFET III Series
Technical Datasheet
193 In Stock
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| Quantity | Price (ex VAT) |
|---|---|
| 1+ | £2.040 |
| 10+ | £1.750 |
| 50+ | £1.730 |
| 200+ | £1.490 |
| 500+ | £1.420 |
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Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB140NF75T4
Order Code1751977
Product RangeSTripFET III Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id120A
Drain Source On State Resistance0.0075ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation310W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeSTripFET III Series
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
STB140NF75T4 is a N-channel STripFET™ III power MOSFET. This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Typically suitable for switching application.
- 75V minimum drain-source breakdown voltage (ID = 250µA, VGS =0, TCASE=25°C)
- 2 to 4V gate threshold voltage range ( VDS = VGS, ID = 250µA)
- 0.0065ohm typical static drain-source on resistance (VGS = 10V, ID = 70A)
- 160S typical forward transconductance (VDS = 15V, ID = 70A)
- <lt/>0.0075ohm RDS(on)
- 30ns typical turn-on delay time (VDD = 38V, ID = 70A, RG = 4.7ohm, VGS = 10V)
- 120A maximum source-drain current
- 115ns typical reverse recovery time (ISD = 120A, di/dt = 100A/µs, VDD = 35V, Tj = 150°C)
- 450nC typical reverse recovery charge (ISD = 120A, di/dt = 100A/µs, VDD = 35V, Tj = 150°C)
- D²PAK package, maximum operating junction temperature range from -55 to 175°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
310W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.0075ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
STripFET III Series
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:France
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:France
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536
Product traceability