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STB11NM60T4
Power MOSFET, N Channel, 650 V, 5.5 A, 0.4 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB11NM60T4
Order Code1751972RL
Product RangeMDmesh
Technical Datasheet
Product Information
ManufacturerSTMICROELECTRONICS
Manufacturer Part NoSTB11NM60T4
Order Code1751972RL
Product RangeMDmesh
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id5.5A
Drain Source On State Resistance0.4ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation160W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeMDmesh
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.5A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
160W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.4ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
MDmesh
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002495
Product traceability